Carbon Ion Implantation Technique Allows Direct Synthesis of Wafer-Scale Graphene in Silicon Microelectronics

A team of researchers from Korea University, Seoul, has developed an easy and scalable technique for growing graphene, and have synthetically produced high-quality, multi-layer, wafer-scale graphene on silicon substrates. This latest breakthrough paves the way for using graphene in silicon microelectronics on a commercial scale. The study has been published in AIP Publishing’s journal Applied Physics Letters.

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