Carbon Ion Implantation Technique Allows Direct Synthesis of Wafer-Scale Graphene in Silicon Microelectronics
A team of researchers from Korea University, Seoul, has developed an easy and scalable technique for growing graphene, and have synthetically produced high-quality, multi-layer, wafer-scale graphene on silicon substrates. This latest breakthrough paves the way for using graphene in silicon microelectronics on a commercial scale. The study has been published in AIP Publishing’s journal Applied Physics Letters.
Read more at: http://www.azonano.com/news.aspx?newsID=33336
A Blog for Browsing Mining, Mineral Processing, and Metals Info 